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| Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit: mm 6.90.1 1.05 2.50.1 (1.45) 0.05 0.8 q q q 0.45-0.05 +0.1 (Ta=25C) 1 2 3 0.45-0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2.50.5 2.50.5 +0.1 Ratings 45 35 4 50 600 150 -55 ~ +150 Unit V V V mA mW C C 1.20.1 0.65 max. 0.45+0.1 - 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.50.1 (HW type) s Electrical Characteristics (Ta=25C) Parameter Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) Cre PG fT Conditions VCB = 20V, IE = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 10mA IC = 20mA, IB = 2mA VCB = 10V, IE = -1mA, f = 10.7MHz VCB = 10V, IE = -10mA, f = 58MHz VCB = 10V, IE = -10mA, f = 100MHz 18 300 500 45 35 4 20 50 100 0.5 1.5 V pF dB MHz min typ max 0.1 Unit A V V V Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Common emitter reverse transfer capacitance Power gain Transition frequency 14.50.5 0.85 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. 1.0 3.50.1 0.8 s Features 0.15 0.7 4.0 1 Transistor PC -- Ta 800 80 70 2SC4787 IC -- VCE 60 25C VCE=10V IC -- VBE Collector power dissipation PC (mW) 700 Collector current IC (mA) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 60 1.6mA 50 40 30 20 10 0 0 2 4 6 8 10 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA Collector current IC (mA) IB=2.0mA 1.8mA 50 Ta=75C 40 -25C 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C IC/IB=10 120 hFE -- IC 600 VCE=10V VCB=10V Ta=25C fT -- I E Forward current transfer ratio hFE 100 Transition frequency fT (MHz) 10 30 100 500 80 Ta=75C 60 25C 40 -25C 400 300 200 20 100 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25C 30 PG -- IE VCB=10V f=58MHz Ta=25C 3.0 2.5 2.0 25 2.0 1.6 Power gain PG (dB) 1 3 10 30 100 20 1.5 1.2 15 1.0 0.8 10 0.5 0.4 5 0 1 3 10 30 100 0 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Emitter current IE (mA) 2 |
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